60mw-80mw 1310nm Pulse Laser Diode Manufacturer

60mw-80mw 1310nm Pulse Laser Diode

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The 60mw-80mw 1310nm pulse laser diode uses an internationally known brand name chip, and features a maximum output power of 130mw. It is often used in OTDR systems.

Absolute Maximum Ratings

Parameter	Symbol	Min.	Max.	Unit
Pulsed Forward Current	IFP		750	mA
Reverse Voltage	VR		2	V
Reverse Voltage (monitor PD)	VRM		10	V
Reverse Current (monitor PD)	IFPM		2	mA
Operating Temperature	TC	0	60	°C
Storage Temperature	Tstg	-40	85	°C
Lead Soldering Temperature	Tsld		260(10s)	°c
Relative Humidity (Noncoagulable)	RH		85	%

Optical & Electrical Characteristics

Parameter	Symbol	Min.	Typ.	Max.	Unit	Notes
Forward Voltage	VFP			3.5	V	IFP = 450 mA, PW = 10 μs, Duty = 1%
Threshold Current	Ith		10	15	mA
Optical Output Power From SM Fiber	Pf	20	80		mW	IFP =450 mA, PW = 10 μs, Duty = 1%
Center Wavelength	λc	1290	1310	1330	nm	PW = 10 μs, Duty = 1%
Spectral Width	σ			4	nm	RMS (-3 dB)
Rise Time	tr		0.5	2.0	ns	10-90%
Fall Time	tf		0.5	2.0	ns	90-10%
Monitor Current	Im	0.05		2	mA	VRM = 2V

As an experienced FP pulsed diode laser (for OTDR system) manufacturer and supplier in China, our company also offers 8-10mw 1653.5nm Butterfly Laser Diode for gas detection, butterfly fiber coupled laser diodes, Pin TIA receiver, and more.