155M 1310nmFP TX /850nm RX BOSA

155M 1310nmFP TX /850nm RX BOSA
155M 1310nmFP TX /850nm RX BOSA
155M 1310nmFP TX /850nm RX BOSA
155M 1310nmFP TX /850nm RX BOSA
Request a Quote
Features
  • 310nm uncooled InGaAs/InP MQW-FP LD
  • InGaAs PIN- TIA Receiver With 850nm WDM Filter integrated for multi-mode fiber bi-directional transmission
  • Cross Talk <-45dB, Isolation >35dB
  • Connector Typ.e: LC、 SC、ST、FC、 Pigtail etc.
  • High Output Power, High Sensitivity
  • RoHS compliant
Applications

For SONET/SDH/ATM equipment interconnect

Absolute Max.imum Ratings
Parameter Ratings Unit Conditions
Storage Temperature -40~+85 TSTG
Operating Case Temperature -20~+70 TOP
Forward Current(LD) 150 mA If(LD)
Forward Voltage(LD) 2 V Vf(LD)
Reverse Current (PD) 2 mA Ir(PD)
Reverse Voltage (PD) 15 V Vr(PD)
Soldering Temperature (< 10sec.) 260 Stemp
Optical & Electrical Characteristics
Transmitter
Parameter Symbol Min. Typ. Max. Unit Condition
Threshold Current Ith - 10 15 mA CW
Optical Output Power Pf -4.5 - -2 dBm CW, If=Ith+20mA, kink free
Operating Voltage Vf - 1.2 1.5 V CW
Central Wavelength λc 1290 1310 1330 nm CW
Spectral Width Δλ - 2 4 nm CW
Rise Time tr - - <300 ps Ib=Ith, 20~80%
Fall Time tf - - <300 ps Ib=Ith, 80~20%
PD Monitor Current Im 100 - 900 μA CW, Vr(PD)=5V
Series resistor Rs - - 12 Ohm -
PD capacitor Ct - 6 15 pF Vr(PD)=5V,f=1MHz
Tracking Error TE -1.5 - 1.5 dB Im = const (@ Po = 0.5 mW, Tc = 25°C) Tc = −40 to +85°C
Receiver
Parameter Symbol Min. Typ. Max. Unit Condition
Power Supply Vcc - 3.3 - V -
Supply Current Icc - 28 40 mA no loads
Small-Signal Bandwidth BW 115 165 - MHz -
Rise Time/Fall Time(20%~80%) Tr/tr - 0.15 0.4 ns P=-18, λ=850nm
Saturation Power Psat -3 - - dBm λ=850nm
Sensitivity - - - -32 dBm λ=850nm,PRBS7,ER=10dB, BER=1E-10
Package Outline
Related products
Send Message
Other Products
Inquiry
Inquiry